Noise and Equivalent Circuit of Double Injection
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چکیده
منابع مشابه
Noise and Equivalent Circuit of Double Injection
.Measurements o~ the high-frequ~ncy noi:e of a silicon double-injection diode result in (i'l)=a• 4kT ( 1/r) ~if With a= 1.04 and m agreement With the literature. A new interpretation demands Nyquist noise with a 121 in these devices at high frequencies. This is in accord with an equivalent circuit derived for the doubleinjection process. Speculations are made on the general validity of Nyquist ...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1968
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.1656089